China’s CXMT unveils ‘key progress’ on chip structure pursued by Samsung, SK Hynix
Memory chip giant says its proprietary transistor design could increase storage density and improve efficiency
CXMT planned to roll out a new server-memory product based on the structure by the end of 2026, president Cao Kanyu said at an industrial event in Shanghai over the weekend, according to a company statement.
At the centre of the development is the “4F square” design, in which each memory cell occupies an area of four square F, with F representing the minimum line width of a semiconductor. The structure enables higher storage density by fitting more cells onto a single chip.
For now, mainstream commercial dynamic random-access memory (DRAM) uses a 6F square-cell structure.
